主芯片和MCU

NTBG022N120M3S

Silicon Carbide (SiC) MOSFET - 22 mohm, 1200 V, M3S, D2PAK-7L

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L NTBG022N120M3S Features • Typ. RDS(on) = 22 m • Low switching losses (Typ. EON 485 J at 40 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications • Solar Inverters • Electric Vehicle Charging Stations • Uninterruptible Power Supplies (UPS) • Energy Storage Systems • Switch Mode Power Supplies (SMPS) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −10/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −3/+18 V Continuous Drain Current (Note 2) Steady State TC = 25°C ID 58 A Power Dissipation RJC (Note 2) PD 234 W Continuous Drain Current RJC (Note 2) Steady State TC = 100°C ID 41 A Power Dissipation RJC (Notes 1, 2) PD 117 W Pulsed Drain Current (Note 3) TC = 25°C IDM 159 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C Source Current (Body Diode) TC = 25°C, VGS = −3 V IS 53 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23.1 A, L = 1 mH) (Notes 4, 5) EAS 267 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 10 seconds) TL 245 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR−4 board using 1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions

• Industrial