模拟和接口芯片

CRTD700P10L

CRTD700P10L

Trench P-MOSFET -100V, 59mΩ, -26A

产品特性

Features Product Summary • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) RDS(on) typ. • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) VDS -100V 59mΩ ID -26A 100% Avalanche Tested 100% DVDS Tested Package Marking and Ordering Information Packing Absolute Maximum Ratings -55...+150 mJ °C Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS VGS Part # CRTD700P10L Qty 2500pcs Tape Width N/A Reel Size N/A Marking CRTD700P10L Package A Gate-Source voltage V ID A Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Symbol Unit V -26 -80 -17 VDS Value -100 -104 42 ±20 Ptot 102 Tj , T stg TO-252 Reel Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature wave soldering only allowed at leads ID pulse W 100% Avalanche Tested 100% DVDS Tested Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) T
产品应用

• Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies

规格
型号DataSheetDimension (mm)Description