模拟和接口芯片

CRTD500P10L

Trench P-MOSFET -100V, 42mΩ, -29A

Package Marking and Ordering Information Packing Absolute Maximum Ratings Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature, wave soldering only allowed at ID pulse Value -100 -116 68 ±20 Ptot 84 Tj , T stg ID A Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) TC = 25°C (Package limit) TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Symbol Unit V -29 -32 -18 VDS W Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) EAS VGS Part # CRTD500P10L Qty 50pcs Tape Width N/A Reel Size N/A Marking CRTD500P10L Package TO-252 Reel A Gate-Source voltage V -55...+150 mJ °C 100% Avalanche Tested 100% DVDS Tested Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) Tsold 260 °C

• Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies